Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors

Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors

Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors

Stress-induced changes in the imprint and switching behavior of ~111!-oriented Pb(Zr,Ti)O3 ~PZT!-based capacitors have been studied using piezoresponse force microscopy. Visualization of polarization distribution and d33-loop measurements in individual 131.5-mm 2 capacitors before and after stress application, generated by substrate bending, provided direct experimental evidence of stress-induc...

Spatial variations in local switching parameters of ferroelectric random access memory capacitors

Non-Kolmogorov-Avrami-Ishibashi switching dynamics in nanoscale ferroelectric capacitors.

Switching dynamics of nanoscale ferroelectric capacitors with a radius of 35 nm were investigated using piezoresponse force microscopy. Polarization switching starts with only one nucleation event occurring only at the predetermined places. The switching dynamics of nanoscale capacitors did not follow the classical Kolmogorov-Avrami-Ishibashi model. On the basis of the consideration of two sepa...

Piezoresponse force microscopy studies of switching behavior of ferroelectric capacitors on a 100-ns time scale.

Piezoresponse force microscopy is a powerful technique for nm-scale studies but is usually limited by response time. In this Letter, we report the first direct studies of ferroelectric capacitor switching on a submicrosecond time scale. Simultaneous domain imaging and sub-mus transient current measurements establish a direct relationship between polarization P(t) and domain kinetics. Switching ...